Manufacture of amorphous semiconductor film

Abstract

Abstract PURPOSE:To reduce a local level density in a forbidden band, in preparing the amorphous semiconductor film on a sample substrate by discharge phenomenon by introducing SiH4, B2O6, PH3, and the like in a vacuum tank to obtain a specified internal pressure, by including one kind of gas selected from NO, NO2, and N2O of 1ppm-1% in a volume ratio with respect to SiH4. CONSTITUTION:The flow rates of gases 1-3 such as SiH4, B2O6 and PH3 which are diluted by H2 gas, respectively, are precisely controlled by mass flow controller 4-6. Said gases are supplied to the vacuum tank 7. A high frequency power source 11 is provided at the outside of said vacuum tank 7. In the inside thereof, the sample substrate 12 is arranged by way of a substrate heating heater 10 and a susceptor 9. A shower 8 which is also used as one electrode is provided over the substrate 12 with a distance being provided. With the substrate 12 being rotated, the amorphous semiconductor film is deposited thereon by the discharge phenomenon. At this time, at least one gas of 1ppm-1% in the volume ratio with respect to SiH4, which is selected from NO, NO2 and N2O is included so as to facilitate resistance control.

Inventors

• 👤 Kuniharu Yamada

Bibliographic Details