Manufacture of metal oxide semiconductor type semiconductor device

Abstract

Abstract PURPOSE:To improve the problems of the delay of working speed, the increase of leakage currents, etc. resulting from a fact that semiconductor layers for forming conventional elements cannot help becoming to non-single crystals by shaping a non-single crystal semiconductor layer and irradiating energy beams to at least a channel region prearranged section. CONSTITUTION:Laser beams using Nd-VAG as a ight source are irradiated to a channel region, a source region 8 and a drain region 9 of an element region, and polycrystal silicon is annealed. When the energy beams are irradiated not only the channel region but also the source region 8 and the drain region 9, phosphorus ion-injected in an electrode forming process may be activated through the irradiation of the energy beams. Accordingly, the manufacture has various excellent advantages owing to structure of which a gate electrode is buried and shaped under the channel region, and the problems of the delay of working speed, etc. resulting from the fact that an element must be formed to the polysilicon layer can also be improved.

Inventors

• 👤 Yoshihisa Mizutani
• 👤 Susumu Kayama

Bibliographic Details