Photo electromotive force element

Abstract

Abstract PURPOSE:To lead out the carrier generated on the surface of a P-N junction with the least resistance loss by a method wherein a pair of electrodes are formed into a comb shape and then they are formed into the structure in which the fingers of one of electrodes are inserted in between the fingers of the other electrode. CONSTITUTION:An amorphous P type silicon layer 32 is formed on one side of the surface of an insulated substrate 31 using a high frequency sputtering method. An amorphous I type silicon layer 33 is formed on all the sections of a P type silicon layer 32 other than the the electrode formed section which is remained as it is. An amorphous N type silicon layer 34 is formed on the I type silicon layer 33. A positive electrode 35 and a negative electrode 36 are formed on the P type silicon layer 32 and the N type silicon layer 34 respectively. These two electroes 35 and 36 are arranged in such manner that the fingers of one of electrodes are inserted in between the fingers of other electrode.

Inventors

• 👤 Akihiko Nakano
• 👤 Hitoshi Matsumoto
• 👤 Nobuo Nakayama
• 👤 Seiji Ikegami

Bibliographic Details