Light emitting diode device

Abstract

Abstract PURPOSE:To have no effect on luminous performance by environmental conditions such as the air conditions by a method wherein the P-N junction on a mesa side surface is coated with insulating materials. CONSTITUTION:A one conductivity type layer 2 having N type or P type conductivity is formed on a substrate 1 and a reverse conductivity type layer 3 having reverse conductivity against the layer 2 is formed on the layer 2. Furthermore, after forming electrode layers 6, 7 at the opposite surfaces, concave sections are formed by etching to make a light emitting diode in arrayed shape. Insulating materials 10 are filled in the concave sections provided by etching and a P-N junction formed between the layer 2 and the layer 3 is coated.

Inventors

• 👤 Takehiko Iwaoka

Bibliographic Details