Semiconductor device

Abstract

Abstract PURPOSE:To enable high integration of a semiconductor device by a method wherein element isolation films having bird beaks protruded in element regions length thereof being the half or less of the film thickness are provided on the surface of a semiconductor substrate. CONSTITUTION:A polycrystalline Si layer doped with phosphorus is provided on the P type Si substrate 1 interposing a thermal oxide film 2 between them, selective oxidation is performed to form thick oxide films 6 making a nitride film provided thereon as a mask, and after the nitride film is removed, the polycrystalline Si film being not oxidized is removed (3'' are remaining Si layers), and the remaining Si layers 3'' are oxidized again to form the element isolation oxide films having bird beaks protruded in the element regions length thereof being the half or less of the film thickness. Accordingly the minute element isolation films can be formed, and accordingly formation of element in minute type can be attained.

Inventors

• 👤 Hisahiro Matsukawa
• 👤 Hiroshi Nozawa
• 👤 Junichi Matsunaga

Bibliographic Details