Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to obtain a semiconductor substrate having few generation of defect improving the element isolation technique by a method wherein after a material layer having high oxidation speed and being provided on the semiconductor substrate is oxidized selectively using a mask having the intervals of less than the prescribed pitch, while a part of the remaining material layer is removed. CONSTITUTION:After the polycrystalline Si layer 3 is provided on the Si substrate 1 interposing an insulating film 2 between them, the Si3N4 mask having the intervals of pitch of 2mum or less between mask is provided, and selective etching is performed to form thick field oxide films 6, and after the Si3N4 film is removed, a part of the remaining polycrystalline Si layer is removed, and still remained polycrystalline Si layers 3'' are oxidized. Accordingly generation of defect is reduced, the element isolation films can be formed, and formation of the device in minute type can be attained.

Inventors

• 👤 Hisahiro Matsukawa
• 👤 Hiroshi Nozawa
• 👤 Junichi Matsunaga

Bibliographic Details