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JPS577951A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process

Assignee: Toshiba Components Co Ltd
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Filing: 1980-06-18
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Granted: —
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Expires: 2000-06-18
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Abstract

Abstract PURPOSE:To eliminate the need for nickel plating in whole surface finishing by a method wherein a layer plated with nickel every the stem and a lead is assembled, and sintered simultaneously together with glass. CONSTITUTION:The plated layer (a) formed by plating each simple of the stem body 1 and the lead 4 with nickel or copper is made up previously, and the layer is sintered simultaneously together with glass 3 as it is left as it is under this condition. Accordingly, time is shortened and labors and materials can be economized in the manufacturing process because the whole surface need not be plated in order to finish the stem, and cost is cheapened. The bending of the lead is not generated, and efficiency is improved even at the points of yield and operation.

Inventors

  • 👤 Shoei Ikemoto
  • 👤 Kotaro Ishibashi

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-07 01:48
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/02

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS56129349A Cited

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