Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To observe and judge the dimensions of the pattern to be etched based on the variation in the intervals between the slits, by etching the checking patterns which are so arranged that the intervals between a plurality of the slits have specified relationship with respect to the magnitude of the intervals, together with the pattern to be etched. CONSTITUTION:On the same substrate, are etched the pattern to be etched 1 having a designed central width W and maximum allowable deviation values l and u of the dimensions and the dimension checking patterns 2 at the same time. The checking patterns 2 are so arranged that the intervals between the pattern 2-1 and 2-6 having the designed central width W become gradually larger by DELTAW. That is W3=W and W5=W4+DELTAW. Suppose W=1mum, observe and compare the magnitude of the pattern to be etched after etching, and check the magnitude of the equivalent checking pattern 2-1 after etching. Then check that which interval width after etching correscponds to the magnitude of the checking pattern. Then the deviation of the etching is computed. In this method, the dimensions can be judged by observation without actual measurement of the pattern to be etched after etching.

Inventors

• 👤 Shuji Kanamori

Bibliographic Details