Semiconductor device

Abstract

Abstract PURPOSE:To protect the surface of a semiconductor substrate from gamma-rays, etc., and to prevent the disconnection of a wire by forming a flow-stopping beltlike film, which is hydrophobic to resin, inside an electrode pad of the surface of the semiconductor substrate and shaping a resin layer on an internal surface of the flow- stopping film. CONSTITUTION:The flow-stopping beltlike film 13 is formed onto an insulating film 12 such as a PSG film shaped onto the wiring 11, etc. of the surface of the semiconductor substrate 10 so as to surround an electric circuit forming region 14. The flow-stopping film 13 is formed inside the electrode pads 11A molded to the circumference. The flow-stopping film 13 is shaped by a material, which is preferably hydrophobic to resin 7 and is difficult to be moistened, such as polycrystal silicon. The resin such as polyimide is dropped, and the resin layer 7 is formed. Accordingly, even the wire 3 section is not coated with the resin layer, and the disconnection of the wire due to the shrinkage of the resin layer 7 can be prevented.

Inventors

• 👤 Takashi Yabu
• 👤 Yorihiro Uchiyama

Bibliographic Details