Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an element separating film having the small difference of dimensional conversion by selectively oxidizing a material layer, the speed of oxidation thereof is faster than the semiconductor substrate, formed onto the substrate while using Si3N4 as a mask and removing the Si3N4 film and an oxynitride film. CONSTITUTION:A phosphorus doped polycrystal Si layer 13' is shaped onto the P type Si substrate 11 through a terminal oxide film 12, the Si3N4 layer 15 is formed selectively on the surface through a thin oxide film 14, a field oxide film 16 is molded by selectively oxidizing the whole while using the Si3N4 layer 15 as a mask, and the Si3N4 film 15 is removed while the oxynitride layers 16, 17 formed at the end sections of the layer 13' are taken off, and succeeding processes are conducted. Accordingly, the element separating film having few defectes can be shaped while the difference of dimensional conversion can be decreased.

Inventors

• 👤 Hiroshi Nozawa
• 👤 Hisahiro Matsukawa
• 👤 Junichi Matsunaga

Bibliographic Details