Etching method of silicon oxide film

Abstract

Abstract PURPOSE:To make it possible to perform fine machining in the case the silicon oxide film is etched by irradiating positive ions provided with fluorine atoms on the surface of the silicon oxide film, by irradiating light, whose energy takes out electrons from the base material of the silicon oxide film lifts the electrons up to the conduction band of the silicon oxide film. CONSTITUTION:Etching gas C2F6 is introduced into an ion gun 21. When an ion stream from the ion gun 21 passes a mass spectrograph 23 in a high vacuum container 20, the electrons 25 mixed in the ion stream are returned back to the direction to the ion gun 21, and a neutral gas stream 24 flows to an evacuating device 31. The remaining positive ions 26 are deflected by the magnetic field when they pass between a pair of permanent magnets. Only selected ions with appropriate mass reach a specimen surface 28. Under this state the light whose wavelength is at the vicinity of 360nm emitted from a high voltage mercury lamp is irradiated on the specimen surface through a quartz window, and the surface of the silicon oxide film is etched.

Inventors

• 👤 Yukinori Kuroki

Bibliographic Details