Manufacture of photodetector

Abstract

Abstract PURPOSE:To avoid the crack of a compound semiconductor substrate by opposing a photodetector formed with a P-N junction in the substrate and a charge transfer element formed on an Si substrate, connecting the inputs thereof, and forming a corroded groove on the compound substrate in advance when the compound substrate is reduced in thickness. CONSTITUTION:A photoresist film 11 is formed at each of both ends of a phototector forming region on a P type Hg1-xCdxTe substrate 1 having a thickness of approx. 300mum, and the element forming region is only etched and removed at approx. 15mum with mixture solution of Br, CH3OH. Then, a resist film 12 is covered thereon, the groove 13 forming region is removed, and the groove 13 is formed in the depth of approx. 20mum. Thereafter, an Si substrate 4 having N type regions 6 of the same number is opposed with the region, and the regions 6 are connected to the regions 2 via In metal posts 7 and the P-N junction 3. Them the back surface of the substrate 1 is polished to expose the bottom surface, C thereby reducing the thickness of the substrate 1.

Inventors

• 👤 Mitsuo Yoshikawa
• 👤 Shigeki Hamashima
• 👤 Hiroshi Takigawa
• 👤 Michiharu Ito
• 👤 Tomoshi Ueda

Bibliographic Details