Semiconductor device

Abstract

Abstract PURPOSE:To miniaturize the whole element, and to minimize power consumption by each forming a single crystal region and a polycrystal region on an insulating film. CONSTITUTION:A P type semiconductor region 4 is formed through a hole shaped into the insulating film layer 6 from the main surface side in a substrate 1 in which an N type semiconductor layer 1b having comparatively high resistivity is molded onto an N<+> type substrate 1a having comparatively low resistivity. An N type semiconductor layer is further grown on the main surface containing the insulating film layer 6 in an epitaxial manner. In this case, a section on the semiconductor region 4 functions as the signal crystal layer 7 and a section on the insulating film layer 6 as the polycrystal layer 8. A vertical bipolar-transistor is formed among the single crystal layer 7, the semiconductor region 4 and the substrate 1, and the semiconductor region 4 serves as its floating-base.

Inventors

• 👤 Akio Tamama
• 👤 Yasusuke Yamamoto
• 👤 Masahiro Sakagami
• 👤 Yoshihiko Mizushima

Bibliographic Details