Photoelectric converter

Abstract

Abstract PURPOSE: To lengthen a light receiving section easily by using a photoelectric converting element with thin-film field-effect transistor structure. CONSTITUTION: The two photoelectric converting elements with thin-film field- effect transistor structure are formed by an insulating layer 302 shaped onto a substrate 301, the first gate electrode 303, the second gate electrode 304, a semiconductor layer 305 having photosensitivity, a source electrode 307, an output electrode 308 and a drain electrode 309. The photoelectric converter is composed in such a manner that either of semiconductor layer regions A, B is used as a light incident section and the other as a non-light incident section. Since the two photoelectric converting elements are arranged adjacently in this constitution, threshold voltage, etc. are obtained at approximately the same value, and the distribution of output characteristics can be ignored when the photoelectric converter is composed of a plurality of the photoelectric converting elements. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Katsunori Hatanaka
• 👤 Shunichi Uzawa

Bibliographic Details