Treating method for silicon substrate

Abstract

Abstract PURPOSE:To increase a speed for depositing interstitial oxygen atoms to allow crystal defects to be easily formed within a substrate by including metallic atoms selected from the IVb-IIb groups in a long periodic table of elements in the silicon substrate and by subjecting said substrate to heat treatment. CONSTITUTION:Silicon substrate 41, 42 plated with cupper films 31, 32 respectively and a silicon substrate 2 disposed between said substrates 41, 42 are placed on a boat 1, and they are subjected to heat treatment in nitrogen at temperature of about 800 deg.C for about 4hr to allow cupper to be diffused into the substrate 2. Then, the substrates 41, 42 are removed, and heat treatment is performed in nitrogen at temperature of about 1,050 deg.C for about 18hr. Hereby, an increase of a speed for depositing intersititial oxygen is found, and crystal defects are formed in the substrate 2.

Inventors

• 👤 Masanobu Ogino
• 👤 Toshiro Usami
• 👤 Masaharu Watanabe

Bibliographic Details