Manufacture of seiconductor device

Abstract

Abstract PURPOSE:To lead out an electrode wiring from a diffusion layer of small area securely without considering a discrepancy of a mask by a method wherein a connection hole is formed in an insulation film by anisotropic dry etching. CONSTITUTION:A portion of the first insulation film 12 formed on a semiconductor substrate 11 is removed and a diffusion layer 13 of an impurity is formed by using the film 12 as a mask. Then the second insulation film 14 is formed overall the surface. Then the overall surface of this substrate 11 is etched by anisotropic dry etching such as reactive ion etching by which the substrate is exposed in plasma in Freon gas between parallel-pole electrodes. With above method etching is progressed only in a vertical direction and a connection hole 15 is formed leaving the thin second insulation layer 14 inside the 1st insulation layer 12 which is used as the mask. Then on electrode wiring 16 such as of aluminum is formed by a conventional method.

Inventors

• 👤 Iwao Higashinakagaha

Bibliographic Details