Prepration of epitaxial crystal in liquid phase and its device

Abstract

Abstract PURPOSE: To prepare high-quality epitaxial crystal of multi-layer film structue in high yield, by closing arbitrarily unnecessary opening parts amount plural opening parts of reaction chambers. CONSTITUTION: The boat 28 of In and the boat 29 of Ga are arranged in the reaction chamber a, the boat 30 of In is set in the reaction chamber b, the right side of the reaction chamber a (or b) is to be closed by the semicircular quartz cover plate 36 equipped at the top of the quartz tubular body 35 H 2 /PH 3 /AsH 3 /H 2 S, HCl/ H 2 , HCl/H 2 , H 2 S/PH 3 /H 2 , and HCl/H 2 are made to flow in the pipes 23W27 respectively, the outlet of the reaction chamber a is covered by the quartz plate 36 (figured by the solid line), an InP layer is grown on the InP base plate 34 equipped with the pulling rod 33 by InCl and PH 3 gas formed in the reaction chamber b (the gas in the reaction chamber a is exhausted through the pipes 37 and 35). The quartz tubular body 35 is rotated, the outlet of the reaction chamber b is covered by the quartz plate 36 (figured by the dotted line), and an InGaAsP layer is grown on the base plate 34. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Hirokuni Tokuda

Bibliographic Details