Amorphous thin solar cell

Abstract

Abstract PURPOSE:To improve photosensitivity for a short wavelength side and a long wavelength side by arranging amorphous Si at a light sensitive side on a conductive substrate wherein amorphous Si and amorphous Ge having junction structure respectively are laminated. CONSTITUTION:An amorphous Si layer having a semiconductor junction has sensitivity for a short wavelength of mainly 0.4-0.7mum in solar light and converts the short wavelength into electrical energy. Amorphous Ge having a semiconductor junction converts a wavelength light of 0.65-1.1mum in solar light passed the amorphous Si layer into electrical energy. Therefore, the short wavelength light is effectively absorbed into the amorphous Si layer and the long wavelength light is effectively absorbed by the amorphous Ge layer and both of them become photocurrent. Therefore, the characteristics of photosensitivity will remarkably be improved.

Inventors

• 👤 Setsuo Kaneko

Bibliographic Details