Preparation of semiconductor device

Abstract

Abstract PURPOSE:To shorten the manufacturing process and improve the yield ratio by a method wherein impurities which are low in density and have the same conductivity as that of a substrate are introduced into the whole of the substrate simultaneously with the formation of a guard ring, so that ion injection into the channel of an enhancement type FET and the application of a photoresist mask can be omitted. CONSTITUTION:When a guard ring 5 is made on a P type Si substrate 1 by injecting ions, a P layer 18 is simultaneously made on the substrate, the P layer being provided with the specified density. Then an N layer 7 is made by selectively injecting ions through a gate oxide film 6b. An opening 9 is made in the film 6b and poly-Si 10, SiO2 6c are laid on top of the film. After this, gates 11, 11a and a connecting layer 19 are formed by etching, and covered with an oxide film 6d. Phosphorus diffusion is employed to make sources 12, 12a and drains 13, 13a, and the resistance of the gates and the connecting layer is reduced. Then, an oxide film 6e and PSG14 under the film are provided. An opening is selectively made and Si 10a is used to cover the surface, while Al 15 is laid after phosphorus diffusion. Patterning is then provided to complete the manufacturing process after covering the surface with an oxide film 6f. With this constitution, ion injection for heightening the density of E type FET channel and the application of a photoresist mask are made unnecessary.

Inventors

• 👤 Katsuhiko Suzuki

Bibliographic Details