Non_volatile semiconductor memory

Abstract

Abstract PURPOSE:To shorten a program time, by writing a data simultaneously in >=2 addresses of a memory area for obtaining a data of 1 bit. CONSTITUTION:IG-FET8A and 8B decide to write a data ''1'' or ''0'' in memory cells designated by a block A and B, respectively. In this case, a potential detecting circuit 9 decides an on or off state of the FETs 8A, 8B in accordance with a potential level of a supplied write data. In this case, a write data is written, for instance, by classifying it into 4 kinds of potential, and writing data of 2 addresses such as A0=''0'' and A0=''1'' by turning on and off the FETs 8A, 8B by the potential of outputs (s), (t) of the circuit 9, and 2 memory cells selected by a line decoder 5 and a row decoder 14 are programmed at the same time.

Inventors

• 👤 Hiroshi Iwahashi
• 👤 Masamichi Asano

Bibliographic Details