Manufacture of compound semiconductor device

Abstract

Abstract PURPOSE:To obtain an electrode having microminiature pattern without lateral expansion by forming a laminar structure in which an Ni thin layer and an Au-Ge eutectic alloy thin layer as well as an Ni thin layer are laminated when an electrode is provided on the N type or N<+> type GaAs crystalline surface, and then heat treating it as ohmic contact part. CONSTITUTION:An Ni thin film 12 of 30-150Angstrom thick, an Au-Ge eutectic alloy thin layer 13 of 1,000-2,000Angstrom thick and 88:12 of Au:Ge and an Ni thin layer 14 of 200-400Angstrom thick are sequentially laminated and deposited in vaccum on the surface of N type or N<+> type GaAs crystal 11. Thereafter, it is heat treated at 350- 425 deg.C for 5min, thereby producing a preferably ohmic contact with the crystal 11. In this manner, when the layer 13 is in molten state, the layer 12 prevents the contact of the layer 13 with the crystal 11, a part of the Ni of the layers 12, 14 is dissolved in the layer 13 to raise the melting point of the layer 13, and the solution reaction of the Ni can be suppressed.

Inventors

• 👤 Yoshimoto Fujita
• 👤 Yasuhiro Ishii
• 👤 Noriyuki Shimano

Bibliographic Details