Continuous sputtering device

Abstract

Abstract PURPOSE:To improve productivity and film quality by connecting gas discharge means at the intermediate of the inserting chamber and treating chamber for substrates to be trated, and at the intermediate of the treating chamber and a take-out chamber, and providing intermediate containing chambers provided respectively with specific mechanisms. CONSTITUTION:While an inserting chamber 5 is re-evacuated by an evacuating pump 6, plural sheets of the substrates contained in an intermediate containing chamber 21 are fed successively into a sputtering chamber 1 by a conveying mechanism and are formed with desired films, after which they are contained in an intermediate containing chamber 22. After the total number of the substrates contained in the chamber 1 are fully contained in the chamber 22 after the sputter treatment, the sealing valves 26, 27 provided at both ends of the sputtering chamber are closed. Thence, the sealing valve 28 provided at the intermediate of the chamber 22 and a take-out chamber 7 is opened, and the treated substrates 4 contained in the chamber 22 are transferred into the chamber 7. At this time, plural sheets of the substrates 4 contained in the chamber 5 kept already under the prescribed pressure are transferred into the chamber 21 by opening the valve 25. The above-mentioned operations are repeated.

Inventors

• 👤 Hideki Tateishi
• 👤 Tsuneaki Kamei
• 👤 Katsuo Abe
• 👤 Hide Kobayashi
• 👤 Susumu Aiuchi
• 👤 Masashi Nakatsuka
• 👤 Nobuyuki Takahashi
• 👤 Ryuji Sugimoto

Bibliographic Details