Plasma etching method

Abstract

Abstract PURPOSE: To gently taper the edge part of an opening and to convert the deep part into a vertical side wall by etching each body to be etched with a reactive sputter etching apparatus of parallel flat plate type while grounding it and setting it at the high frequency negative potential side in succession. CONSTITUTION: An electrode 36 supporting each body 40 to be etched is grounded. By supplying an electric current to an opposite electrode 32 for generating plasma from a high frequency power source RF through a capacitor 33, an electric field is produced between the electrodes 32, 36. A gas such as CF 4 introduced into a reactor 31 is made plasma, and the body 40 of SiO 2 is plasma-etched in the form of a funnel. The polarities of the electrodes 36, 32 are then exchanged, and the body 40 is etched in the vertical direction. By this method the opening of the SiO 2 film 22 is funneled. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Minoru Inoue

Bibliographic Details