Transistor

Abstract

Abstract PURPOSE:To improve the heat dissipation of an ultrahigh frequency FET and to reduce the disorder of a characteristic impedance of the FET by forming a common conductor layer connected through a penetrating hole at the front and the rear surfaces of a dielectric substrate, and carrying an element on the conductor layer on the surface of the substrate. CONSTITUTION:An FET element 3 made, for example, of GaAs in secured on a metallic layer 2' formed on the surface of, for example, a beryllia ceramic substrate 1, and a source electode is connected to a metallic layer 2'. the layer 2' is connected through the hole 5 formed at the substrate 1 to the ground electrode 2 on the rear surface, a lead 10 is formed on the metalic layers 2'', 2''' on the surface, the gate electrode and drain electrode of the element 3 are connected, and a strip line device can be formed. In this manner, the static capacity between the electrodes and the reactance component between the source and the ground can be reduced, the heat dissipation can be improved, thereby stabilizing the operation of the ultrahigh frequency range.

Inventors

• 👤 Shinzo Anazawa
• 👤 Seiichi Ueno
• 👤 Isamu Nagameguri
• 👤 Tadashi Nawa

Bibliographic Details