Solid-state image pickup device

Abstract

Abstract PURPOSE:To leave less signals unread through enhancing the strength of blooming suppression and extending the read time, by reading out signal charge to a CTD after clamping the potential of a photoelectric conversion element. CONSTITUTION:During the horizontal scanning period, a vertical gate line 54 is low-potential, and excessive charge overflowed from a photodiode is flowed into a vertical signal line 55 and is excluded to an external line BLDA. When the potential of the vertical gate line 55 becomes high-level during the horizontal fly-back time, an intensive light is irradiated, and the potential of the photodiode is clamped in a constant potential. After that, signal charge accumulated in the photodiode is transferred to the vertical signal line and is further transferred to a charge transfer element 59. During the horizontal scanning period, signals are read out from the charge transfer element 59 to the external successively.

Inventors

• 👤 Masaaki Nakai
• 👤 Shinya Oba
• 👤 Toshibumi Ozaki

Bibliographic Details