Photoelectric converter

Abstract

Abstract PURPOSE:To obtain the extremely high photoelectric conversion efficiency by applying a semiamorphous semiconductor to a photoelectric converter. CONSTITUTION:A photoelectric converter having double MIS configuration of M-I1-SAS-I2-M made of the first electrode 24 (M), insulating or semi-insulating film 23 (I) of the thickness capable of flowing tunnel current, a semiamorphous semiconductor 20 (SAS), insulating or semi-insulating film 21 (I) having the thickness capable of flowing the second current, and pectinated or lattice type second electrode 22 (M) is formed on a substrate 4, where I1, I2 represent semi-insulating nitrided silicon formed by glow discharge or plasma CVD method. The first electrode 24 is made of metal having higher than 4.0eV of work function, e.g., Pt or the like, the second electrode 22 is made of metal having lower than 4.0eV of work function, e.g., Mg or the like, and light 30 is emitted. In this manner, high conversion efficiency of 6-10% can be obtained.

Inventors

• 👤 Shunpei Yamazaki

Bibliographic Details