Formation of amorphous film containing silicon

Abstract

Abstract PURPOSE:To form a homogeneous amorphous film having no rodlike structure by applying a magnetic field to a discharge space when plasma contg. Si is generated by discharge to form a photoelectrically converting amorphous film contg. Si on each substrate. CONSTITUTION:Each glass substrate 10 is mounted on an electrode 3, and after reducing the internal pressure of a reactor 1 to 1mm.Hg, a high frequency voltage is applied to electrodes 2, 3 while feeding a gaseous mixture of SiH4 and H2. At the same time, an alternating current of 50Hz is supplied to a coil 5 set around the eactor 1 in the horizontal direction to apply a magnetic field of 10-500G (gauss) between the electrodes 2, 3. At this time, the substrate 10 is heated to about 300 deg.C with a heating coil 9 and kept for 2min. Thus, an amorphous film contg. Si and having photoelectrically converting characteristics is formed uniformly on the substrate 10 without producing a small rodlike structure vertically, and the film shows superior photoelectric conversion efficiency when used in a solar battery, etc.

Inventors

• 👤 Mamoru Mizuhashi

Bibliographic Details