Semiconductor device

Abstract

Abstract PURPOSE:To obtain a GaAs solar battery with a higher efficiency of photoelectric conversion by increasing the diffusion depth of a P type GaAs layer in the portion for forming an ohmic contact. CONSTITUTION:A P type GaAs layer 2 is diffused into an N type GaAs substrate 1 to obtain a P-N junction 3 and a P type Ga1-XAlXAs layer 4 is formed thereon. Then, an antireflection film 5 is formed on the layer 4 and, successively the P type GaAs layer 2 is deeply diffused partially. The thickness of a P type GaAs layer 2a thus formed is thicker than that of the P type GaAs layer 2 at the bottom of the antireflection film 5. A P type ohmic electrode 6 is evaporated on said P type GaAs layer 2a whole an N type ohmic electrode 7 is evaporated on the back of the N type GaAs substrate 1. A solar battery thus obtained provides excellent characteristics of a open end voltage and a curve factor, hence high in the efficiency of photoelectric conversion.

Inventors

• 👤 Susumu Yoshida
• 👤 Kotaro Mitsui
• 👤 Takao Oda
• 👤 Yoshinori Yukimoto

Bibliographic Details