Forming method for pattern

Abstract

Abstract PURPOSE:To minimize a proximity effect of electron beams, and to obtain the minute pattern by exposing a large area section and a bridge section by the slightly small amount of irradiation and exposing both sides of the bridge through thin beams by the slightly large amount of irradiation. CONSTITUTION:The large area section and the bridge section are exposed by the amount of irradiation 42 slightly less than the proper amount of irradiation, and both sides of the bridge are doubly exposed through thin beams by the amount of irradiation 41 slightly more than the proper amount of irradiation. The resist pattern 2 with the bridge section 10 according to the design is formed because the electron beams are reflected by a substrate 3 and are more than the proper amount of irradiation.

Inventors

• 👤 Tadao Kato
• 👤 Hideo Saeki
• 👤 Kazunori Saito

Bibliographic Details