Resin sealing type semiconductor device

Abstract

Abstract PURPOSE: To prevent the cracking of a passivation film by forming a slit along a corner to a guard ring of an aluminum film shaped along a peripheral section of a substrate. CONSTITUTION: An element region 2 is formed to the semiconductor substrate 1, and a field oxide film 3 is shaped. A PSG (silicate glass containing a phosphorous oxide) layer 9 bringing impurities such as sodium to a getter condition is molded as a surface insulating film. An aluminum wiring layer 10 and a bonding pad 5 are formed, and the guard ring 6 consisting of the aluminum film is shaped to the peripheral section of the substrate. The slit 10 is molded to the corner section of the guard ring 6 on a corner section of the substrate 1. The width of the guard ring decreases only by the width of the slit, stress applying to the passivation film 7 is reduced, and the formation of a crack of the passivation film 7 can be prevented. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Yuji Hara
• 👤 Tatsu Ito
• 👤 Tatsuro Totani

Bibliographic Details