Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To each a polycrystal silicon layer and a SiO2 film by using the same etching-mask, and to form a side surface of an electrode window in a stepped shape by utilizing the presence or absence of the directional property of etching. CONSTITUTION:The semiconductor device in which a P type Si substrate 11 an N type collector layer 12, a P type base region 15, an N<+> type emitter region 21, a SiO2 film 13 with a base electrode window 16, an emitter electrode window 17 and a SBD electrode window 18 not penetrated, and a polycrystal cilicon layer 19 are formed is shaped through conventional technique, a photo-resist 22 is molded and an etching window 23 for the electrode window is formed. The polycrystal silicon layer 19 in the etching window 23 is removed through an etching method having no directional property so that the desired side-etching region 24 is shaped. The SiO2 film 13 is ethced vertically through an etching method havin directional property and the window is penetrated, and a SBD electrode window 25, a side surface thereof is stepped, is formed.

Inventors

• 👤 Tadashi Kirisako
• 👤 Ryoji Abe
• 👤 Yoshinobu Monma

Bibliographic Details