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JPS5743341A Expired / Lapsed JP ⏱️ 0.0 years remaining

Face discharge type gas discharge panel

Assignee: Fujitsu Ltd
•
Filing: 1980-08-27
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Granted: —
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Expires: 2000-08-27
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Abstract

Abstract PURPOSE:To improve the insulation by composing the surface layer thicker than 5,000Angstrom of the second layer dielectric material facing with the gas discharge space and coating over the second layer electrode conductor with heat resistant film material layer thereby preventing the fusion of the second layer dielectric material. CONSTITUTION:Al-Cu alloy is spattered on a glass substrate 1 at the process temperature of 400 deg.C to form the first layer electrode conductor 4 having the film depth of 2mum, while the borosilicate glass is deposited to the film depth of 5mum at the process temperature of 350 deg.C to form the first layer dielectric material 5. Then the second layer metallic conductor 6 is formed under same condition with the metallic conductor 5, while the second layer dielectric material 7a composed of the borosilicate glass is deposited to the film depth of 2.5mum at the process temperature of 350 deg.C. Furthermore a heat-resistant magnesium oxide film 7b having the film depth of 5,000Angstrom is deposited. Consequently the heat is blocked through the discharge in the discharge gas space 3 thereby the fusion of the dielectric material can be prevented.

Inventors

  • 👤 Den Shinoda
  • 👤 Yoshinori Miyashita
  • 👤 Yoshimi Sugimoto
  • 👤 Kenichi Oki

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 14:21
CPC Classifications
H; H01; H01J; H01J11/00

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