Semiconductor laser device

Abstract

Abstract PURPOSE:To enable laser oscillation in a 0.6mum band by a method wherein each layer material of a laser is constituted by In1-x-yGaxAlyP, and compositions are selected properly. CONSTITUTION:N type In0.45Ga0.15Al0.4P 13 with 2mum thickness, I type In0.45 Ga0.45Al0.1P 14 with 0.1mum thickness, P type In0.45Ga0.15Al0.4P 15 with 1mum thickness and P type GaAs 16 with 0.8mum thickness are grown continuously on an N type GaAs substrate 12. The compositions x, y are selected so as to satisfy 0<=x <=0.6, 0<=y<=0.5 and grid-matched with GaAs in the active layer 14, and grid- matched with the layer 14 in forbidden band width larger than the layer 14 and selected so as to satisfy 0<=x<=1, 0<=y<=1, 0<=x+y<=1 in the clad layers 13, 15. Trimethyl Ga, Al, In and PH3 are used, and H2S or diethyl zinc is added. The ratio of a mixed crystal and the concentration of impurities are controlled by selecting the flow rate of each gas. A reaction temperature is about 500 deg.C. According to this constitution, laser oscillating wavelength in 0.61mum is obtained at room temperature.

Inventors

• 👤 Kazunari Oota
• 👤 Masaru Kazumura
• 👤 Haruyoshi Yamanaka

Bibliographic Details