High pressure resisting insulating gate type semiconductor device

Abstract

Abstract PURPOSE:To remove the limit of characteristics by pinch resistance by a method wherein a conductive type layer the same as source and drain layers is adjoined to the channel side in a shape that it has concentration lower than the layers and is shallow, and overlapped on a heat resisting gate electrode through a gate oxide film. CONSTITUTION:Inversion preventive layers 21 and thick SiO222 are formed, SiO225 is opened and the source and drain 26, 27 are diffused, and the gate oxide films 5, 5', the gate electrode 16 by poly Si and wiring layers 16' are selectively made up on the surface. The drain 2 and the source 3 and layers 18-20 are built up according to diffusion by self-matching by utilizing these. The surface is covered with SiO223, and electrodes are formed selectively. According to this constitution, since the gate electrode extends onto the layer 18, the interface contacting with the film 5 functions as a storage type during operation even when a drain junction is reverse- biased and a depletion layer is made up in the layer 18, the saturation of drain currents due to pinch-off is prevented and an MOS device having high pressure resistance is obtained.

Inventors

• 👤 Shuji Kubo
• 👤 Tadashi Uno

Bibliographic Details