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JPS574130A Expired / Lapsed JP ⏱️ 0.0 years remaining

Adhesion of semiconductor element

Assignee: Tokyo Sanyo Electric Co Ltd
•
Filing: 1980-06-10
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Granted: —
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Expires: 2000-06-10
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Abstract

Abstract PURPOSE:To sharply reduce the quantity of gold used by a method wherein, when a semiconductor element is adhered to a frame, a gold ball is provided on the frame using a nail-head bonding device, the gold ball is beated out into flat form by performing a rolling or a heat-molting process, the element is placed and heated on the stretched out gold and it is adhered using a gold and silicon eutectic. CONSTITUTION:The end section of the gold bonding wire 2, protruding from the capillary chip 1 on the nail-head bonding device, is heated up with a hydrogen torch 3 and the gold ball 4 is formed. Then, the gold ball 4 is placed on the adhering position of the semiconductor element on the frame 5 and the ball 4 is fixed by performing thermopress welding using the capillary chip 1 or by supersonic welding. Then, the ball 4 is formed into falt shape by performing heat-moltening using a pressing stick 6 or a heater, an element 7 is provided at the flat gold and the frame 5 is adhered on the frame 5 using the gold and silicon eutectic which was generated by heating.

Inventors

  • 👤 Takeshi Akiyama
  • 👤 Makoto Fujita

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-02 03:12
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/013; H10W72/011; H10W72/0113; H10W72/012; H10W72/01221; H10W72/01225; H10W72/071; H10W72/0711; H10W72/07141; H10W72/073; H10W72/07331; H10W72/07336; H10W72/30; H10W72/351; H10W72/352; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/731; H10W90/736

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