Semiconductor device

Abstract

Abstract PURPOSE:To prevent production of a thin portion at a conductive layer connecting accumulated circuit elements by combining accumulated semiconductor layers with a semiconductor layer attached inside an interlayer tunnel which passes through the accumulated portion of semiconductor layer. CONSTITUTION:At least a part of semiconductor layers 6 and 7 forming circuit elements different from each other is accumulated on a semiconductor substrate 1 via insulating layers (silicon oxide film) 8 and 8A. A semiconductor layer (polycrystalline silicon layer) 21 attached inside an interlayer tunnel which passes through the accumulated portions of the semiconductor layers connects between the accumulated semiconductor layers 6 and 7. In the Fig. a field oxide film is represented as 4, a gate oxide film as 5, a phosphosilicate glass film as 22, a junction as 23A, and a wiring layer as 24.

Inventors

• 👤 Masao Kanazawa

Bibliographic Details