Semiconductor device

Abstract

Abstract PURPOSE:To improve the humidity resistance of a semiconductor device having an Si gate MOS field effect transistor, by providing a metal protective film layer and a silicon nitride film protective layer on a semiconductor substrate provided with an insulating layer and an Al wiring layer. CONSTITUTION:A thermal oxide film 2, a gate insulating film 3, a gate conductor section 4 consisting of polycrystalline Si and, source and drain regions 5, 6 are formed on an Si substrete 1. Next, an SiO2 layer 7 including phosphorus is formed at a low temperature by a CVD method to form Al wiring 8. Next, a CVD-SiO2 layer 9 is formed to cover the upper part of the layer 9 with a metal 10 made of Al and the like and an Si3N4 film 11. The layer 9 is protected by the layer 10 and the film 11, so that stable characteristics can be obtained against Na pollution and air pollution.

Inventors

• 👤 Seiichi Iwamatsu

Bibliographic Details