Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To easily perform the maintenance and control of the subject semiconductor device by a method wherein a semiconductor wafer is oxidized by introducing the vapor, generated by hydrogen burning at a high-temperature section, into a low-temperature furnace core tube. CONSTITUTION:A heater 33 is provided in order to form a high-temperature section at the gas introducing section on the furnace core tube 11 having a heater 16 which is constituting a low-temperature section and at this section, an oxygen feeding tube 31 and a hydrogen introducing tube 32 are provided at the same time, H2 gas and O2 gas are introduced from these introducing tubes, vapor is generated by buring hydrogen using the heater 33, the generated vapor is introduced into the low-temperature section and an oxidizing treatment is performed on the semiconductor wafer 19. Through these procedures wherein no pure water is used, the maintenance and control of the heat treating device can be performed easily and a low temperature oxidation can also be accomplished.

Inventors

• 👤 Yoshihiko Azuma
• 👤 Kentaro Matsui

Bibliographic Details