Device for plasma processing

Abstract

Abstract PURPOSE:To change the flowing quantity of plasma as well as to perform a uniform and highly precise etching by a method wherein the density or size of the holes, to be provided at the electrode section of a plasma etching and processing device, are formed in such a manner that they are small in the center part and are becoming larger in proportion to approaching to the end section. CONSTITUTION:Plasma 6 is generated between aluminum electrodes by applying high frequency power 4 to perforated cylindrical electrodes 9 and 9' made of aluminum which are provided around the vacuum case having a gas lead-in port 2 and a gas exhausting port 3. The density of the holes to be provided on the electrode 9 is low in the vicinity of the center part of the supporting stand 7 of a substrate and becomes higher with approaching to both ends, thereby allowing to increase the quantity of the plasma 6. Through these procedures, a uniform plasma etching can be performed, the accuracy of the ethcing is increased and also a large quantity can be processed at a time.

Inventors

• 👤 Akira Mochizuki

Bibliographic Details