Processing method of resist

Abstract

Abstract PURPOSE:To increase the pinholeless property and the microscopic workability for the subject resist by a method wherein, when a beam is irradiated and exposed on the resist which was applied on a film to be processed, the beam is at first irradiated at low voltage, then it is irradiated at high voltage, a developing process is performed and a stepped aperture pattern is formed. CONSTITUTION:An electron beam resist 17 is applied on the surface of the film to be processed on a substrate 1 until enough thickness, with which no pinholes will be generated, is formed. This resist is exposed to the beam 18 of a low voltage. The beam is to be used in the intensity with which the principal chain or a bridging of the resist material will be cut and that the monomoleculing action will not reach the lower surface of the resist. When the beam is irradiated using a high voltage without changing the position of the wafer to be irradiated, the beam passes through a resist film 19 and cuts the principal chain and the bridging of the remaining resist 20 located at the lower part. A two-stepped resist aperture 2 can be formed by performing an ordinary developing process. Through these procedures, the pinholeless property can be increased and the microscopic working can also be performed.

Inventors

• 👤 Hiromi Sakurai

Bibliographic Details