Depressurized chemical vapor phase growth device

Abstract

Abstract PURPOSE:To hold composition of concentration of a reaction gas at constant and to form uniform vapor phase growth films by a method wherein in parallel with the tube axis of a depressurized CVD tube, an introducing tube having gas introducing ports is arranged at the upper part, and an exhausting tube having absorbing ports is arranged at the lower part facing with each other. CONSTITUTION:The conduit 14a of a reaction gas introducing system 14 is provided for some length at the upper part in parallel with the tube axis in the reaction tube 21, plural reaction gas discharging ports 14b are bored thereon, and when silane gas is introduced by this system, gas is decomposed in the atmosphere of 400-900 deg.C inside of the tube to generate hydrogen and silicon, and silicon is deposited on the surfaces of wafer to form vapor phase growth films. In an exhausting system 13, the exhausting tube 13a is provided for nearly equal length with the reaction gas introducing tube 14 at the lower part in parallel with the tube axis, absorbing ports 13b are bored facing to the reaction gas discharging ports 14b, and hydrogen gas is exhausted therefrom. Accordingly composition of concentration of reaction gas is held at constant, unevenness of speed of vapor phase growth is reduced, and the uniform vapor phase growth films are formed.

Inventors

• 👤 Kazuo Niwa
• 👤 Shigeyuki Sawamukai
• 👤 Masashi Minato

Bibliographic Details