Semiconductor circuit

Abstract

Abstract PURPOSE:To speed timing between input clocks by quickening the rising of an output by employing precharge timing which goes down to a low level immediately after a TTL level input clock is activated. CONSTITUTION:When a row strobe signal RAS changes from a high to a low level, a preseteing-precharging period changes into an activation period and an insulating gate type field effect transistor MOSTQ3 turns off. Then when an initial-stage output RAS rises up to a threshold voltage VDD level by bootstrap capacity C1F through a MOSTQ2, a contact 7 rises following up it through a MOSTQ18. Since an SE is grounded at this time, a MOSTQ20 is held turned off and a MOSTQ21 turns on, so that a contact 8 is grounded. Precharging timing PXO' comes after PXO by a MOSTQ22 and at the VDD level, but the MOSTQ22 turns off and a floating potential is held. Simultaneously with the MOSTQ21, an MOSTQ23 turns on and the PXO' goes down to the earth potential immediately.

Inventors

• 👤 Akira Osami

Bibliographic Details