Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the sidewise etching of an oxidized film in a semiconductor device by treating a resist film used for etching polysilicon formed on a gate oxidized film in oxygen plasma atmosphere, baking it and then opening a diffusing window. CONSTITUTION:A field oxidized film 12 and a gate oxidized film are formed on a P type Si, polysilicon 14 is accumulated, with a resist film 18 as a mask the polysilicon is ethced to form a gate electrode or the like, the film 18 is treated in plasma atmosphere containing as main ingredient oxygen, is then dipped in xylene or the like, the surface of the resist film is softened, is then baked, with the resist film as a mask the oxidized film is ethced to open source and drain windows, and impurity is diffused. Since the oxidized film under the polysilicon is not sidewisely etched in this manner, it can sufficiently clean a semiconductor device, thereby improving the characteristics of the device.

Inventors

• 👤 Wakao Miyazawa

Bibliographic Details