Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve light emitting efficiency and the characteristics of modulation by a method wherein a PN junction of a light emitting diode is prepared through liquid-phase epitaxial growth, and a semi-insulating semiconductor layer and an active layer of a FET are formed through a molecular beam epitaxial method in the semiconductor device controlling the light emitting output of the diode by the input signals of the FET connected in series. CONSTITUTION:The light emitting diode is manufactured in such a manner than an N<+> type Ga0.8Al0.2As layer 12 and a P type Ga0.9Al0.1 As layer 13 are laminated and deposited on an N<+> type GaAs substrate 11 through the slide board type liquid-phase epitaxial growth method and the PN junction is formed between the layers 12 and 13. A P<+> type Ga0.7Al0.3As layer 14 is further grown on the layer 13 in a liquid phase in order to decrease contact resistance. The element is admitted into another device and grown through the molecular beam epitaxial growth method, but an N type or undoped GaAs layer 15 is shaped previously in order to prevent contact with air and the discontinuance of the layer 14 at that time. A GaAs layer 16 is grown through the molecular epitaxial growth method and used as the semi-insulating semiconductor layer, and an N type CaAs layer 17 functioning as the active layer of the FET is grown on the layer through the same method.

Inventors

• 👤 Tsutomu Wada
• 👤 Tomonobu Sugawara

Bibliographic Details