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JPS5726432A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of semiconductor device

Assignee: Hitachi Ltd
•
Filing: 1980-07-23
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Granted: —
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Expires: 2000-07-23
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Abstract

Abstract PURPOSE:To effectively prevent the disconnection of an aluminum wire by smoothly covering the edge of the first insulating film perforated with connecting hole with the second insulating film and forming aluminum wire. CONSTITUTION:A polyimide resin 8 is rotarily coated on an SiO2 film 2 opened on the diffused layer of an Si substrate 1 to smoothen the acute edge of the opening. It is then etched with hydrazine to retain a resin film 8A at the peripheral edge. An aluminum wire 6 is formed, is covered with PSG9, a hole 10 is opened, and an electrode pad is formed. Since the edge is smooth according to this configuration, it can prevent the stepwise disconnection of the aluminum wire.

Inventors

  • 👤 Minoru Imai
  • 👤 Yoshiaki Kawai

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-28 08:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40

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