Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a semiconductor device having multilayer electrodes including high profit and reliability and a method of manufacturing the same by forming a surface film selected from molybdenum, tungsten or cobalt between interlayer insulating film side and a gold film. CONSTITUTION:First metallic layers 151, 152 are constructed in four-layer structure having a titamium film, a platinum film, a gold film and a surface film selected from molybdenum, tungsten or cobalt from the substrate side, second metallic layers 181, 182 are constructed in three-layer structure having a titanium film 18a, a platinum or palladium intermediate film 18b and a gold film 18c from the interlayer insulating film side 16, and the first and second layers are connected mutually via platinum or palladium filled in hole regions 171, 172 from each other. In this manner, the interlayer insulatin film is covered on the surface film such as molybdenum to avoid the contact of th gold film with the insulating film. Accordingly, invasion of undesired etchant at the time of forming the insulating hole can be prevented.

Inventors

• 👤 Toshiro Sakamoto
• 👤 Kazuyuki Saito

Bibliographic Details