Cleaning method for semiconductor manufacturing apparatus

Abstract

Abstract PURPOSE:To sublime and remove a solid accumulated material by generating a plasma in a furnace. CONSTITUTION:Remaining gas in a reaction furnace 1 is exhausted by a vacuum pump 14, cleaning gas 11 is led from a gas flow inlet tube 5 into the furnace 1 to maintain vacuum state. Then, high frequency electric field is applied to the electrodes 12, 13 to generate a plasma between the electrodes 12 and 13, thereby simultaneously subliming and removing the solid accumulated material remaining in the furnace and tube system. In case that the accumulated material is silicon or silicon compound, Freon gas (CF4) is used as a cleaning gas, and when the material is organic material, oxygen gas (O2) is used as the cleaning gas.

Inventors

• 👤 Kenji Anzai

Bibliographic Details