Apparatus for treating surface with gas decomposed by light

Abstract

Abstract PURPOSE: To enable a surface treatment to be highly precisely worked without damaging the substrate surface, by decomposing an etching gas by a light, and jetting the resulting radicals onto the substrate in a sample chamber wherein a low pressure is kept. CONSTITUTION: An etching gas is introduced from an introducing section 11 into a pre-chamber 12 where it is decomposed by a light beam 16 into radicals which are then introduced via a slit 13 into the treatment chamber 14. The pressure in the pre-chamber 12 is kept at about 2 Torr, whereas the pressure in the treatment chamber 14 is kept at about 6×10 -4 Torr by an exhaustion system 15. In the treatment chamber 14, the substrate 18 is moved in a direction normal to the path of the radicals by a conveyor 17 with the distance between the slit 13 and the substrate 18 being about 20mm. As the pressure in the pre-chamber 12 is relatively high whereas the pressure in the treatment chamber 14 is low, the produced radicals are jetted through the slit 13 against the substrate 18 to etch the whole surface of the substrate 18 moved horizontally. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Yukinori Kuroki

Bibliographic Details