Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To use polycrystal Si as a resistance layer by heating the surface of a single crystal Si layer on a SOS substrate and forming the polycrystal Si. CONSTITUTION:In a material of which a P type region 2 and N<+> diffusion regions 3 are formed onto the SOS substrate, electron beams, ion beams and laser rays are irradiated using a Si3N4 film 11 and a SiO2 film 10 as masks, and the single crystal Si layer 2 is degenerated into the polycrystal Si 5. The polycrystal Si 5 may be shaped by changing a very small amount of an N type impurity into an N type conduction type through diffusion to an N<+>-N junction. A gate electrode 4 and a metallic wiring layer 8 are formed through a conventional process. Accordingly, since the process of the resistance layer which has been manufactured through deposition can be omitted and the thickness of a polycrystal silicon layer can be controlled, the controllability of resistance value is improved, and integration is enabled to a high degree.

Inventors

• 👤 Hide Konishi

Bibliographic Details