Formation of passivation film

Abstract

Abstract PURPOSE:To form the passivation film uniformly and thickly with least loss of resin by a method wherein a resin film is formed on the surface of the semiconductor wafer, on which an element has been formed, and then the resin film is laminated. CONSTITUTION:Torayneece is dripped and rotatably applied for coating on the Si wafer wherein an element was formed, and after a film 10 has been formed by hardening under heat, a film 11 is formed by laminating a film of 12mum in thickness, which is made of completely hardened Torayneece using a wet expanding method, at the temperature of 100 deg.C using a hot roll laminator, polyimide is completely hardened by performing a staged heating in an N2 atmosphere at 200 deg.C for fifteen minutes and at 300 deg.C for another fifteen minutes, and a passivation film is formed. Through these procedures, a thick passivation film can be formed without loss of resin.

Inventors

• 👤 Toshio Yada
• 👤 Atsushi Endo
• 👤 Yuji Hizuka
• 👤 Torahiko Ando

Bibliographic Details